We report the reduction in residual stress of AlN thin films and also thecrystal structure, surface morphology and nanomechanical properties ofmagnetron sputtered as a function of substrate temperature (Ts, 35 - 600 ?C).The residual stress of these films was calculated by sin2 technique and foundthat they are varying from tensile to compression with temperature (Ts).Evolution of crystalline growth of AlN films was studied by GIXRD andtransmission electron microscopy (TEM) and a preferred a-axis orientation wasobserved at 400 ?C. The cross-sectional TEM micrograph and selected areaelectron difraction (SAED) of this film exhibited a high degree of orientationas well as a columnar structure. Hardness (H) measured by Nanoindentationtechnique on these films ranged between 12.8 - 19 GPa.
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